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Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
4.60.2 3.20.1 9.90.3 2.90.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.00.3
4.10.2 8.00.2 Solder Dip
3.00.2
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 30 5 10 45 50 2 150 -55 to +150 Unit V
13.7-0.2
+0.5
1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123
2.60.1 0.70.1
7
V A A mJ W C C
1: Gate 2: Drain 3: Source TO-220E Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 3.6mH, IL = 5A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 200V, ID = 3A VGS = 10V, RL = 66.6 Conditions VDS = 720V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1400 VDS = 20V, VGS = 0, f = 1MHz 140 60 30 60 60 170 2.5 62.5 1.5 900 2 2 3.5 -1.6 5 2.8 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns C/W C/W
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
1
Power F-MOS FETs
Area of safe operation (ASO)
100 60
2SK2340
PD Ta
Allowable power dissipation PD (W)
(1) TC=Ta (2) Without heat sink (PD=2W) 100
IAS L-load
TC=25C
Non repetitive pulse TC=25C IDP ID 1ms 1 10ms t=100ms
Drain current ID (A)
10
40
Avalanche current IAS (A)
50
30
10
30
(1)
3
45mJ
20
1
0.1
DC
10 (2)
0.3
0.01 1 10 100 1000
0 0 20 40 60 80 100 120 140 160
0.1 0.1
0.3
1
3
10
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
L-load (mH)
ID VGS
10 VDS=25V TC=25C 8 6
Vth TC
50 VDS=25V ID=1mA 5
VDS VGS
TC=25C
Drain to source voltage VDS (V)
Gate threshold voltage Vth (V)
40 ID=10A 30
Drain current ID (A)
4
6
3
4
20
2
2
1
10
5A 2.5A
0 0 1 2 3 4 5 6 7
0 0 25 50 75 100 125 150
0 0 5 10 15 20 25 30
Gate to source voltage VGS (V)
Case temperature TC (C)
Gate to source voltage VGS (V)
RDS(on) ID
Drain to source ON-resistance RDS(on) ()
6 6
| Yfs | ID
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000
Ciss, Coss, Crss VDS
VDS=25V TC=25C f=1MHz TC=25C
5
Forward transfer admittance |Yfs| (S)
TC=25C
5
1000
Ciss
4
4
3 VGS=10V 2 15V 1
3
100 Coss Crss 10
2
1
0 0 2 4 6 8 10
0 0 1 2 3 4 5 6 7 8
1 0 40 80 120 160 200
Drain current ID (A)
Drain current ID (A)
Drain to source voltage VDS (V)
2
Power F-MOS FETs
VDS, VGS Qg
600 12 100
2SK2340
Rth(t) t
Notes: Rth was measured at Ta=25C and under natural convection. (1) without heat sink (2) with a 50 x 50 x 2mm Al heat sink 10 (1)
500 VDS 400 VGS 300
10
Thermal resistance Rth(t) (C/W)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
(2)
8
6
1
200
4
0.1
100
2
0 0 10 20 30 40 50
0 60
0.01 10-4
10-3
10-2
10-1
1
10
102
103
Gate charge amount Qg (nC)
Time t (s)
3
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